Sapphire wafer is widely used as a substrate in epitaxy.
Here is the epitaxial technique and equipment used during that process:
MOCVD: Metal-Organic Chemical Vapor Deposition
APCVD: Atmospheric Pressure Chemical Vapor Deposition
RPCVD: Reduced Pressure Chemical Vapor Deposition
LPCVD: Low-Pressure Chemical Vapor Deposition
UHCVD: Ultra-high vacuum Chemical Vapor Deposition
LCVD: Laser-induced Chemical Vapor Deposition
PECVD / PACVD: Plasma Enhanced (Assisted) Chemical Vapor Deposition
RF-MBE: Radio Frequency-Molecular Beam Epitaxy
PA-MBE: Plasma Assisted-Molecular Beam Epitaxy
HVPE: Hydride Vapor Phase Epitaxy
VPE: Vapor Phase Epitaxy
LPE: Liquid Phase Epitaxy
SPE: Solid Phase Epitaxy
CME: Chemical beam epitaxy
ALD / ALE: Atomic Layer Deposition /Atomic Layer Epitaxy
IBAD: Iron Beam Assisted Deposition
PLD: Pulsed Laser Deposition
RF magnetron sputtering
Arc plasma coating
EBE: Electron Beam Evaporation
MBE:
1. Physical deposition process
2. The ultrahigh vacuum coating technique
3. Atomic layer precision thickness control, suitable for ultra-thin superlattice materials
4. Growth of high purity epitaxial layers with high uniformity
MOCVD:
1. Wide range of application: the growth of almost all compounds and alloy semiconductors
2. Precise control of crystal growth; Good repeatability; suitable for industrial production
HVPE:
1. Growth of II-V Nitride compound semiconductor thin film, superlattice materials.
2. Disadvantage: High deposition rate, poor lattice quality
PECVD:
1. Low temperature: save the cost, increase production capacity
2. Fast deposition speed
3. Good lattice quality
4. Disadvantage: High cost (expensive equipment), strict requirements on gas purity
CRYSCORE is a professional sapphire wafer supplier, contact us to get more info.
