R面(1-102)蓝宝石晶片是用于微电子IC应用中硅的异质外延沉积的优选材料。R面是蓝宝石的非极性面。因此,R面在蓝宝石器件中的位置不同,蓝宝石器件的力学、热学、电学和光学性能都会发生很大的变化,这也会影响蓝宝石器件的后续加工性能、加工效率和加工成品率。
为了使蓝宝石晶棒和后续蓝宝石产品的晶体结构一致,更常用的方法是在蓝宝石晶棒上加工一个A方向的表面作为蓝宝石晶片(后续蓝宝石产品)的平面取向,使蓝宝石晶棒和晶片的R方向位置一致。
Item | 2 -inch R-plane(1-102) 430μm Sapphire Wafers | |
Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
Grade | Prime, Epi-Ready | |
Surface Orientation | R-plane(1-102) | |
Diameter | 50.8 mm +/- 0.1 mm | |
Thickness | 430 μm +/- 25 μm | |
Primary Flat Orientation | 45 +/- 1deg. counter-clockwise from C-axis projection on R-plane | |
Primary Flat Length | 16.0 mm +/- 1.0 mm | |
Single Side Polished | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
(SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
Double Side Polished | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
(DSP) | Back Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
TTV | < 10 μm | |
BOW | < 10 μm | |
WARP | < 10 μm | |
Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
25 pieces in one cassette packaging or single piece packaging. |
注:可提供任意晶向和厚度的定制化蓝宝石晶片。