PSS是在蓝宝石衬底上设计、制造特定的纳米级微结构图案,通过生长和刻蚀的方式,控制LED光输出的形式(蓝宝石衬底上的凹凸图案会产生光散射或折射效应,从而提高光的提取率)。
同时,在图案化蓝宝石衬底上生长GaN薄膜将产生横向外延效应,减少GaN与蓝宝石衬底之间的间隙缺陷,提高外延质量以及提高LED内部量子效率和光提取效率。
Item | 2-inch C-plane(0001) 430μm Pattern Sapphire Substrate |
Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 |
Grade | Prime, Epi-Ready |
Surface Orientation | C-plane(0001) |
Diameter | 50.8 mm +/- 0.1 mm |
Thickness | 430 μm +/- 25 μm |
Primary Flat Orientation | A-plane(11-20) +/- 0.2° |
Primary Flat Length | 16.0 mm +/- 1.0 mm |
Pattern Specification | Diameter: 2.4 +/- 0.2 µm; Spacing: 0.6 +/- 0.2 µm; Depth: 1.5 +/- 0.15 µm |
Diameter: 2.7 +/- 0.1 μm; Spacing: 0.3 +/- 0.1 μm; Depth: 1.7 +/- 0.15 μm | |
Front Surface | Epitaxial ready |
Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
Laser Marking | Front side or Back side |
TTV | < 10 μm |
BOW | < 10 μm |
WARP | < 10 μm |
Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, |
25 pieces in one cassette packaging or single piece packaging. |