V面（22-43）蓝宝石晶片

Name: V面（22-43）蓝宝石晶片
Brand: CRYSCORE OPTOELECTRONIC LIMITED

利用X射线摇摆曲线（XRC）研究了V面（22-43）图案化蓝宝石衬底（PSS）上（20-21）GaN薄膜的晶格面曲率和晶格面倾斜等晶体形态。

从GaN（20–22）和（12–31）衍射的非对称XRC结果发现，晶格面倾斜高度依赖于薄膜厚度和生长条件。TEM分析证实，在（22-43）PSS上（20-21）GaN薄膜的C面抑制生长过程中，通过调节V/III比可以有效地抑制基面层错的产生。

Specifications of V面（22-43）蓝宝石晶片

Item	2-inch V-plane(22-43) 430μm Sapphire Wafers
Crystal Materials	99,999%, High Purity, Monocrystalline Al2O3
Grade	Prime, Epi-Ready
Surface Orientation	V-plane(22-43)
Diameter	50.8 mm +/- 0.1 mm
Thickness	430 μm +/- 25 μm
Primary Flat Orientation	A-plane(11-20) +/- 0.2°
Primary Flat Length	16.0 mm +/- 1.0 mm
Single Side Polished	Front Surface	Epi-polished, Ra < 0.5 nm (by AFM)
(SSP)	Back Surface	Fine ground, Ra = 0.8 μm to 1.2 μm
Double Side Polished	Front Surface	Epi-polished, Ra < 0.5 nm (by AFM)
(DSP)	Back Surface	Epi-polished, Ra < 0.5 nm (by AFM)
TTV	< 10 μm
BOW	< 10 μm
WARP	< 10 μm
Cleaning / Packaging	Class 100 cleanroom cleaning and vacuum packaging,
	25 pieces in one cassette packaging or single piece packaging.

注：可提供任意晶向和厚度的定制蓝宝石晶片。

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