N面蓝宝石晶片不像C面(0001)、A面(11-20)或R面(1-102)晶片那样常见。研究表明,在A面(11-20)蓝宝石上生长的AlN,在生长初期,AlN与蓝宝石的N面(11-23)外延关系随氮化温度的变化而变化,而在N面蓝宝石上生长的AlN则保持不变。
其他薄膜,如ZnTe外延层,可以通过分子束外延生长在N面(11-23)蓝宝石晶片上。
Item | 2-inch N-plane(11-23) 430μm Sapphire Wafers | |
Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
Grade | Prime, Epi-Ready | |
Surface Orientation | N-plane(11-23) | |
Diameter | 50.8 mm +/- 0.1 mm | |
Thickness | 430 μm +/- 25 μm | |
Primary Flat Orientation | A-plane(11-20) +/- 0.2° | |
Primary Flat Length | 16.0 mm +/- 1.0 mm | |
Single Side Polished | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
(SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
Double Side Polished | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
(DSP) | Back Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
TTV | < 10 μm | |
BOW | < 10 μm | |
WARP | < 10 μm | |
Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
25 pieces in one cassette packaging or single piece packaging. |
注:可依据客户需求定制生产任意晶向、厚度的蓝宝石晶片。